SNM analytical approach to robust subthreshold SRAM operation based on the 55nm DDC technology

Autor:	Marc Pons Sole, Kazuyuki Kumeno, Nobuhiro Misawa, H. Kurata, Mutsuaki Kai, Ryota Nanjo, Taiji Ema
Rok vydání:	2017
Předmět:	010302 applied physics Physics Subthreshold conduction 0103 physical sciences Electronic engineering Static noise margin Static random-access memory Back bias 01 natural sciences NMOS logic PMOS logic Leakage (electronics)
Zdroj:	2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
DOI:	10.1109/s3s.2017.8308741
Popis:	Subthreshold operational characteristics of Ultra-Low Leakage (ULL) 6T-SRAM bit-cell and circuit based on the 55nm deeply depleted channel (DDC) technology was evaluated. The maximum operation frequency was 5 to 20 MHz (TT @RT) under 0 to 0.34V range of forward back bias (VBB) condition and leakage current in the retention mode reduced down to 285fA/cell by reverse VBB. It was confirmed that the ULL SRAM has sufficient static noise margin (SNM) to operate in the subthreshold region by optimizing NMOS and PMOS VBB separately.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ce67392eac587bff4c51296549c36e26 https://doi.org/10.1109/s3s.2017.8308741 Zobrazit plný text záznamu