Autor: |
Tsuyoshi Aisaka, Kaori Seino, Akira Ishii |
Rok vydání: |
2002 |
Předmět: |
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Zdroj: |
Journal of Crystal Growth. :121-124 |
ISSN: |
0022-0248 |
DOI: |
10.1016/s0022-0248(01)01870-x |
Popis: |
The microscopic migration of group V adatoms on a Ga-terminated GaAs(001) surface is investigated by performing first-principle calculations using density functional theory and a slab model of the surface. It is found that the hopping barrier energies of the As and P adatoms on Ga-terminated GaAs(001) surface are anisotropic and that the hopping barrier energies of those are lower than that of the Ga adatom. Comparing the hopping barrier energies of the As and P adatoms, the migration of the As adatom is easier than that of the P adatom. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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