Theoretical investigation of migration of group V adatoms on GaAs(001) surface

Autor: Tsuyoshi Aisaka, Kaori Seino, Akira Ishii
Rok vydání: 2002
Předmět:
Zdroj: Journal of Crystal Growth. :121-124
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(01)01870-x
Popis: The microscopic migration of group V adatoms on a Ga-terminated GaAs(001) surface is investigated by performing first-principle calculations using density functional theory and a slab model of the surface. It is found that the hopping barrier energies of the As and P adatoms on Ga-terminated GaAs(001) surface are anisotropic and that the hopping barrier energies of those are lower than that of the Ga adatom. Comparing the hopping barrier energies of the As and P adatoms, the migration of the As adatom is easier than that of the P adatom.
Databáze: OpenAIRE