| Autor: |
Juan-Mari Collantes, Raymond Quéré, J.J. Raoux, Almudena Suarez |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
IEEE Microwave and Guided Wave Letters. 8:345-347 |
| ISSN: |
1051-8207 |
| DOI: |
10.1109/75.735416 |
| Popis: |
In this letter a new look-up table model is developed for the nonlinear modeling of radio frequency (RF) LDMOS transistors. The modeling technique is based on the use of approximation splines that are coupled to a pulsed I-V characterization setup. It provides a very fast modeling procedure, while avoiding the appearance of undesired ripples in the modeled functions. The technique has been applied to a RF LDMOS technology for L-band applications, obtaining excellent results in the prediction of both the small- and large-signal transistor responses. This technique is specially suitable for fast-evolution technologies. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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