New measurement-based technique for RF LDMOS nonlinear modeling

Autor:	Juan-Mari Collantes, Raymond Quéré, J.J. Raoux, Almudena Suarez
Rok vydání:	1998
Předmět:	LDMOS Engineering business.industry B-spline Transistor General Engineering Electrical engineering General Physics and Astronomy Non linear model law.invention Nonlinear system law MOSFET Electronic engineering Radio frequency business
Zdroj:	IEEE Microwave and Guided Wave Letters. 8:345-347
ISSN:	1051-8207
DOI:	10.1109/75.735416
Popis:	In this letter a new look-up table model is developed for the nonlinear modeling of radio frequency (RF) LDMOS transistors. The modeling technique is based on the use of approximation splines that are coupled to a pulsed I-V characterization setup. It provides a very fast modeling procedure, while avoiding the appearance of undesired ripples in the modeled functions. The technique has been applied to a RF LDMOS technology for L-band applications, obtaining excellent results in the prediction of both the small- and large-signal transistor responses. This technique is specially suitable for fast-evolution technologies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b1a41a5c4a23649096cde5e40b94545c https://doi.org/10.1109/75.735416 Zobrazit plný text záznamu