Power amplification with silicon carbide MESFET

Autor: J. F. Broch, O. Noblanc, J. P. Prigent, Farid Temcamani, P. Pouvil
Rok vydání: 1999
Předmět:
Zdroj: Microwave and Optical Technology Letters. 23:16-18
ISSN: 1098-2760
0895-2477
DOI: 10.1002/(sici)1098-2760(19991005)23:1<16::aid-mop5>3.0.co;2-f
Popis: Several silicon carbide MESFETs were processed and measured. The static, small-signal, and load-pull measurements of three of them are presented. The broadband power amplification in the UHF band and in class A was studied. An amplifier using a silicon carbide MESFET and another using silicon LDMOS were fabricated. The comparison shows that the silicon carbide is a good candidate or power RF devices. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 23: 16–18, 1999.
Databáze: OpenAIRE
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