Power amplification with silicon carbide MESFET
| Autor: | J. F. Broch, O. Noblanc, J. P. Prigent, Farid Temcamani, P. Pouvil |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
LDMOS
Materials science Silicon business.industry Amplifier Electrical engineering chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound Ultra high frequency chemistry Broadband Silicon carbide Optoelectronics MESFET Electrical and Electronic Engineering business Microwave |
| Zdroj: | Microwave and Optical Technology Letters. 23:16-18 |
| ISSN: | 1098-2760 0895-2477 |
| DOI: | 10.1002/(sici)1098-2760(19991005)23:1<16::aid-mop5>3.0.co;2-f |
| Popis: | Several silicon carbide MESFETs were processed and measured. The static, small-signal, and load-pull measurements of three of them are presented. The broadband power amplification in the UHF band and in class A was studied. An amplifier using a silicon carbide MESFET and another using silicon LDMOS were fabricated. The comparison shows that the silicon carbide is a good candidate or power RF devices. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 23: 16–18, 1999. |
| Databáze: | OpenAIRE |
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