Silicide formation in Co/Si system investigated by depth-resolved positron annihilation and X-ray diffraction
| Autor: | G. Venugopal Rao, S. Kalavathi, S. Abhaya, G. Amarendra, V.S. Sastry |
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| Rok vydání: | 2006 |
| Předmět: |
Diffraction
Materials science Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Atmospheric temperature range Condensed Matter Physics Surfaces Coatings and Films Overlayer Crystallography chemistry.chemical_compound chemistry Vacancy defect Silicide X-ray crystallography Materials Chemistry Positron annihilation |
| Zdroj: | Surface Science. 600:2762-2765 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2006.04.043 |
| Popis: | The transformation of Co/Si to CoSi 2 /Si in the temperature range of 300–1170 K has been investigated using depth-resolved positron annihilation and Glancing incidence X-ray diffraction (GIXRD). The different silicide phases formed are identified from the experimental positron annihilation characteristics, which are consistent with the GIXRD results. The present study clearly indicates the absence of vacancy defects in the silicide overlayer. |
| Databáze: | OpenAIRE |
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