Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate-All-Around PMOS Silicon Nanowire Field-Effect-Transistors
| Autor: | Gyo-Young Jin, Kyoung Hwan Yeo, SeongJoo Lee, Donggun Park, Sungwoo Hwang, Dong-Won Kim, ByoungHak Hong, Keun Hwi Cho |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Condensed matter physics Nanowire Nanotechnology State (functional analysis) Radius Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Noise (electronics) Electronic Optical and Magnetic Materials PMOS logic Condensed Matter::Materials Science Coulomb Field-effect transistor Electrical and Electronic Engineering Quantum tunnelling |
| Zdroj: | JSTS:Journal of Semiconductor Technology and Science. 11:80-87 |
| ISSN: | 1598-1657 |
| DOI: | 10.5573/jsts.2011.11.2.080 |
| Popis: | Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire fieldeffect-transistors with the radius of 5 ㎚ and lengths of 44-46 ㎚ are presented. They show coexisting two single hole states randomly switching between each other. Analysis of Coulomb diamonds of these two switching states reveals a variety of electrostatic effects which is originated by the potential of a single hole captured in the trap near the nanowire. |
| Databáze: | OpenAIRE |
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