| Autor: |
F. Assaderaghi, G.G. Shahidi, M. Hargrove, K. Hathorn, H. Hovel, S. Kulkarni, W. Rausch, D. Sadana, D. Schepis, R. Schulz, D. Yee, J. Sun, R. Dennard, B. Davari |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
1996 Symposium on VLSI Technology. Digest of Technical Papers. |
| DOI: |
10.1109/vlsit.1996.507817 |
| Popis: |
In this paper we experimentally demonstrate that the switching speed of digital circuits built from Non-Fully Depleted (NFD) SOI MOSFETs show a time dependence. Using a very high-bandwidth setup and pulses as short as 1 nsec, the magnitude and range of this memory effect are determined. It is demonstrated that the propagation delay variations have switching-history, V/sub dd/, and L/sub eff/ dependence. The cause of this behavior is traced to the SOI MOSFET's floating body and the dynamic variations of its stored charge and potential. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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