Control of silicon dioxide etching rate in hydrogen microwave plasma by addition of oxygen

Autor:	V.Yu. Yurov, A.P. Bolshakov, I.A. Fedorova, A.F. Popovich, K.N. Zyablyuk, A.S. Altakhov, D.N. Sovyk, P.A. Pivovarov, P.V. Volkov, V.G. Ralchenko
Rok vydání:	2023
Předmět:	General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films
Zdroj:	Applied Surface Science. 612:155834
ISSN:	0169-4332
DOI:	10.1016/j.apsusc.2022.155834
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::79106f5adc17054d2607babd29755769 https://doi.org/10.1016/j.apsusc.2022.155834 Zobrazit plný text záznamu Full Text from ScienceDirect