A 1.8 V 64 Mb 100 MHz flexible read while write flash memory [in CMOS]

Autor: Joel T. Jorgensen, T. Ly, Mase J. Taub, D. Pierce, Rajesh Sundaram, Matthew Goldman, R. Kajley, G. Christensen, Saad Monasa, E. Yu, Alec W. Smidt, W. Tran, A. Sendrowski, Rezaul Haque, Bharat M. Pathak, A. Darwish, Q. Nguyen, Priya Walimbe, A. Cabrera, I. Sharif, R. Trivedi, F. Marvin, H. Shimoyoshi
Rok vydání: 2002
Předmět:
Zdroj: 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).
DOI: 10.1109/isscc.2001.912420
Popis: A flash memory with flexible multi-partition architecture allows programming or erasing in one partition while reading from another partition. The 64 Mb memory uses a 0.18 /spl mu/m process that has a 0.32 /spl mu/m/sup 2/ cell. The device has 18 ns asynchronous page mode access and synchronous burst reads up to 100 MHz with zero wait state.
Databáze: OpenAIRE