Optical diagnostic of silicon carbide based on differential reflectance spectroscopy

Autor: Renata F. Witman, Anatoly V. Shturbin, V.Yu. Panevin, I. E. Titkov, Leonid E. Vorobjev
Rok vydání: 2000
Předmět:
Zdroj: Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505).
DOI: 10.1109/cleoe.2000.910130
Popis: Summary form only given. A simple non-destructive method for characterising SiC samples (Lely-crystals, CREE-substrates, and epitaxial films) is presented. The observed ultraviolet differential reflection spectra of SiC samples were compared with a pure Lely-crystal (model sample) to estimate the structural quality of the sample. The method presented is based on a differential study of ultraviolet reflection spectra of SiC films in comparison with a perfect Lely-crystal.
Databáze: OpenAIRE