Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J of ∼6 fA/cm2

Autor:	Haiyang Xing, Zunke Liu, Zhenhai Yang, Mingdun Liao, Qinqin Wu, Na Lin, Wei Liu, Chuanfan Ding, Yuheng Zeng, Baojie Yan, Jichun Ye
Rok vydání:	2023
Předmět:	Renewable Energy Sustainability and the Environment Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Solar Energy Materials and Solar Cells. 257:112354
ISSN:	0927-0248
DOI:	10.1016/j.solmat.2023.112354
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3c6f56eff2f3130035e9b6b99294be49 https://doi.org/10.1016/j.solmat.2023.112354 Zobrazit plný text záznamu Full Text from ScienceDirect