Gold Deposition From an Organometallic Gas Induced by Incident Ga+, Ar+, or Si+ Ions*

Autor: G.M. Shedd, H. Lezec, A.D Dubner, J. Melngailis
Rok vydání: 1987
Zdroj: Topical Meeting on Microphysics of Surfaces, Beams and Adsorbates.
DOI: 10.1364/msba.1987.tua4
Popis: If a local gas ambient of 10−3 to 10−2 torr pressure of a metal halide, organometallic, or hydrocarbon gas is produced at a surface, deposition of material can be induced where ions are incident. The ion beam is thought to cause the breakup of molecules adsorbed on the surface. Deposition of a mixture of Al, C, and O has been reported(1) from a gas of Al(CH3)3 and mixture of W and O from a gas of WF6. We have used a capillary gas feed of dimethyl gold hexafluoro acetylacetonate (C7H7F6O2Au) and induced gold deposition using a focused 15kV Ga+ ion beam or broad beams of 50kV Si+ and 0.75kV Ar+. See Fig. 1.
Databáze: OpenAIRE