0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz
Autor: | James Kolodzey, Ilesanmi Adesida, S. Agarwala, J. Laskar, A.A. Ketterson, T. L. Brock, Hadis Morkoç |
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Rok vydání: | 1990 |
Předmět: | |
Zdroj: | Microelectronic Engineering. 11:69-72 |
ISSN: | 0167-9317 |
DOI: | 10.1016/0167-9317(90)90075-5 |
Popis: | 0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, f T , of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest f T ever reported for MODFETs with this gate length in any material system. |
Databáze: | OpenAIRE |
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