0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz

Autor:	James Kolodzey, Ilesanmi Adesida, S. Agarwala, J. Laskar, A.A. Ketterson, T. L. Brock, Hadis Morkoç
Rok vydání:	1990
Předmět:	Materials science business.industry Gate length Optoelectronics Material system Heterojunction Electrical and Electronic Engineering Condensed Matter Physics business Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronic Engineering. 11:69-72
ISSN:	0167-9317
DOI:	10.1016/0167-9317(90)90075-5
Popis:	0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, f T , of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest f T ever reported for MODFETs with this gate length in any material system.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::22c509d0d3e18507522604a0bea44b30 https://doi.org/10.1016/0167-9317(90)90075-5 Zobrazit plný text záznamu