| Autor: |
J. F. McClelland, R. N. Kniseley |
| Rok vydání: |
1980 |
| Předmět: |
|
| DOI: |
10.1016/b978-0-12-746850-1.50032-3 |
| Popis: |
The use of photoacoustic detection is discussed as a technique for monitoring laser heating and for characterizing implantation and recrystallization of semiconductors via optical absorption. Preliminary results are reported for laser heating of Ge. A method is proposed for signal processing to enable measurement of optical absorption coefficient changes due to implantation and recrystallization without a background signal from the unimplanted region of the semiconductor. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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