ChemInform Abstract: Growth and Characterization of n-Type (Te) Doped Metal Organic Vapor Phase Epitaxy GaInSb

Autor:	G. G. Allogho, Frédérique Pascal-Delannoy, J. Bougnot, Alain Giani, G. Bougnot
Rok vydání:	2010
Předmět:	Metal Dopant Chemistry Phase (matter) visual_art Doping Analytical chemistry visual_art.visual_art_medium General Medicine Metalorganic vapour phase epitaxy Substrate (electronics) Growth rate Epitaxy
Zdroj:	ChemInform. 24
ISSN:	0931-7597
DOI:	10.1002/chin.199349001
Popis:	The growth of n-type Ga 1-x In x Sb (x≥35%) by metal organic vapor phase epitaxy (MOVPE) using a dimethyltellurium dopant source is investigated both on (001) GaSb misoriented 2 o off touwards and (100) GaAs substrates. The results of growth rate, morphology, and Te incorporation as a function of growth parameters are given. Increasing V/III ratio was found to reduce the Te incorporation. The lowest Hall carrier concentration obtained at room temperature on n-type MOVPE Ga 0.65 In 0.35 Sb grown directly on GaAs substrate is n=6.10 17 cm -3 , but the corresponding mobility is very low. That may be due to a high compensation phenomenon
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::15fb8cff8c0230198299da3346e8b56e https://doi.org/10.1002/chin.199349001 Zobrazit plný text záznamu Plný text