6.2 GHz digital CMOS circuits in thin SIMOX films

Autor:	A. Kamgar, L. E. Trimble, R.L. Field, W.S. Lindenberger, Steven James Hillenius, H.-I. Cong, George K. Celler, James C. Sturm
Rok vydání:	2003
Předmět:	Materials science business.industry Transistor Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY law.invention Frequency divider CMOS law Hardware_INTEGRATEDCIRCUITS Digital integrated circuits Optoelectronics Scaling circuits business Hardware_LOGICDESIGN Electronic circuit
Zdroj:	IEEE SOS/SOI Technology Conference.
DOI:	10.1109/soi.1989.69804
Popis:	Summary form only given. CMOS dual-modulus prescaler circuits built in very thin SIMOX films are discussed. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0f426864be3715fc79e3d5b6cc06baa4 https://doi.org/10.1109/soi.1989.69804 Zobrazit plný text záznamu