| Autor: |
A.R. Sugg, J.J. Sudol, Martin H. Ettenberg, Michael J. Lange, Gregory H. Olsen, Stephen R. Forrest, Marshall J. Cohen |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362). |
| DOI: |
10.1109/iciprm.1999.773709 |
| Popis: |
Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate that low defect density ( |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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