High performance multilevel interconnection system with stacked interlayer dielectrics by plasma CVD and bias sputtering

Autor:	T. Katsura, S. Koguchi, O. Hirata, T. Yamamoto, Yasukazu Mase, Masahiro Abe
Rok vydání:	2003
Předmět:	Interconnection Reliability (semiconductor) Materials science Resist business.industry Sputtering Electronic engineering Optoelectronics Plasma Chemical vapor deposition Dielectric BiCMOS business
Zdroj:	Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference.
DOI:	10.1109/vmic.1989.78001
Popis:	A novel multilevel interconnection system for bipolar or BiCMOS LSIs was developed. Bias sputtered quartz (BSQ) and plasma CVD SiO(P-SiO) constituted the stacked interlayer, making it possible to smooth high aspect ratio (0.82) topography. The electrical properties of the films and the manufacturing-process damage were investigated. The results show that the stacked structure offers good electrical stability and reliability. This system was successfully applied to real devices. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::00360350a4f6567f2ceec284c10fea8e https://doi.org/10.1109/vmic.1989.78001 Zobrazit plný text záznamu