| Autor: |
T. Katsura, S. Koguchi, O. Hirata, T. Yamamoto, Yasukazu Mase, Masahiro Abe |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference. |
| DOI: |
10.1109/vmic.1989.78001 |
| Popis: |
A novel multilevel interconnection system for bipolar or BiCMOS LSIs was developed. Bias sputtered quartz (BSQ) and plasma CVD SiO(P-SiO) constituted the stacked interlayer, making it possible to smooth high aspect ratio (0.82) topography. The electrical properties of the films and the manufacturing-process damage were investigated. The results show that the stacked structure offers good electrical stability and reliability. This system was successfully applied to real devices. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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