Charge-enhancement mechanisms of GaAs field-effect transistors: experiment and simulation.

Autor: McMorrow, D., Melinger, J.S., Knudson, A.R., Buchner, S., Tran, L.H., Campbell, A.B., Curtice, W.R.
Zdroj: RADECS 97 Fourth European Conference on Radiation & its Effects on Components & Systems (Cat No97TH8294); 1997, p346-352, 7p
Databáze: Complementary Index