Charge-enhancement mechanisms of GaAs field-effect transistors: experiment and simulation.
Autor: | McMorrow, D., Melinger, J.S., Knudson, A.R., Buchner, S., Tran, L.H., Campbell, A.B., Curtice, W.R. |
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Zdroj: | RADECS 97 Fourth European Conference on Radiation & its Effects on Components & Systems (Cat No97TH8294); 1997, p346-352, 7p |
Databáze: | Complementary Index |
Externí odkaz: |