Self-aligned silicided inverse-T gate LDD devices for sub-half micron CMOS technology.
| Autor: | Chen, M.-L., Hillenius, S.J., Juengling, W., Yang, T.S., Kornblit, A., Lindenberger, W.S., Swiderski, J.A., Favreau, D.P. |
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| Zdroj: | International Technical Digest on Electron Devices; 1990, p829-832, 4p |
| Databáze: | Complementary Index |
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