16 Mb DRAM/SOI technologies for sub-1 V operation.

Autor: Oashi, T., Eimori, T., Morishita, F., Iwamatsu, T., Yamaguchi, Y., Okuda, F., Shimomura, K., Shimano, H., Sakashita, N., Arimoto, K., Inoue, Y., Komori, S., Inuishi, M., Nishimura, T., Miyoshi, H.
Zdroj: International Electron Devices Meeting Technical Digest; 1996, p609-612, 4p
Databáze: Complementary Index