16 Mb DRAM/SOI technologies for sub-1 V operation.
Autor: | Oashi, T., Eimori, T., Morishita, F., Iwamatsu, T., Yamaguchi, Y., Okuda, F., Shimomura, K., Shimano, H., Sakashita, N., Arimoto, K., Inoue, Y., Komori, S., Inuishi, M., Nishimura, T., Miyoshi, H. |
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Zdroj: | International Electron Devices Meeting Technical Digest; 1996, p609-612, 4p |
Databáze: | Complementary Index |
Externí odkaz: |