High Frequency Analysis of InP Transistors versus Temperature.

Autor: Aniel, F., Zerounian, N., Almeyda, A., Danelon, V., Vernet, G., Crozat, P., Adde, R., Harmand, J.-C., Ladner, C.
Zdroj: 27th European Solid-State Device Research Conference; 1997, p708-711, 4p
Databáze: Complementary Index