High Frequency Analysis of InP Transistors versus Temperature.
Autor: | Aniel, F., Zerounian, N., Almeyda, A., Danelon, V., Vernet, G., Crozat, P., Adde, R., Harmand, J.-C., Ladner, C. |
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Zdroj: | 27th European Solid-State Device Research Conference; 1997, p708-711, 4p |
Databáze: | Complementary Index |
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