Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOSTM using theory of novel voltage sustaining layer.
Autor: | Kondekar, P.N., Parikh, C.D., Patil, M.B. |
---|---|
Zdroj: | 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289); 2002, p1769-1775, 7p |
Databáze: | Complementary Index |
Externí odkaz: |