Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOSTM using theory of novel voltage sustaining layer.

Autor: Kondekar, P.N., Parikh, C.D., Patil, M.B.
Zdroj: 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289); 2002, p1769-1775, 7p
Databáze: Complementary Index