Highly stable partial body tied SOI CMOS technology with Cu interconnect and low-k dielectric for high performance microprocessor.

Autor: Kim, Y.W., Oh, C.B., Kang, H.S., Oh, M.H., Yoo, S.H., Chung, M.K., Kim, B.S., Suh, K.P.
Zdroj: IEEE International 2002 SOI Conference; 2002, p119-120, 2p
Databáze: Complementary Index