Using Ge pre-amorphisation and spike annealing for optimizing shallow junctions in deep-submicron CMOS.

Autor: Meyssen, V.M.H., Stolk, P.A., van Zijl, J.P., van Berkum, J.G.M., van der Wijgert, W.G.
Zdroj: 30th European Solid-State Device Research Conference; 2000, p396-399, 4p
Databáze: Complementary Index