Using Ge pre-amorphisation and spike annealing for optimizing shallow junctions in deep-submicron CMOS.
Autor: | Meyssen, V.M.H., Stolk, P.A., van Zijl, J.P., van Berkum, J.G.M., van der Wijgert, W.G. |
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Zdroj: | 30th European Solid-State Device Research Conference; 2000, p396-399, 4p |
Databáze: | Complementary Index |
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