Anomalous Sb redistribution during the preparation of delta-doping layers in silicon.

Autor: Slijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van de Walle, G. F. A., Gravesteijn, D. J.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1991, Vol. 70 Issue 4, p2111, 6p
Abstrakt: Presents a study which investigated antimony segregation at the moving crystal-amorphous silicon (001) interface during preparation of antimony delta-doping layers. Background on delta-doping layers; Experimental procedures and results; Conclusions.
Databáze: Complementary Index