Autor: |
Tarsa, E.J., Speck, J.S., Robinson, McD. |
Předmět: |
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Zdroj: |
Applied Physics Letters; 7/26/1993, Vol. 63 Issue 4, p539, 3p, 8 Black and White Photographs, 3 Graphs |
Abstrakt: |
Investigates the epitaxial growth of silicon/praseodymium oxide/silicon heterostructure on (111) oriented silicon substrate using pulsed laser deposition. Formation of hexagonal praseodymium oxide film; Structural analysis of oxide and semiconductor layer using reflection high energy electron diffraction; Use of transmission electron microscopy. |
Databáze: |
Complementary Index |
Externí odkaz: |
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