Pulsed laser deposition of epitaxial silicon/h-Pr[sub 2]O[sub 3]/silicon heterostructures.

Autor: Tarsa, E.J., Speck, J.S., Robinson, McD.
Předmět:
Zdroj: Applied Physics Letters; 7/26/1993, Vol. 63 Issue 4, p539, 3p, 8 Black and White Photographs, 3 Graphs
Abstrakt: Investigates the epitaxial growth of silicon/praseodymium oxide/silicon heterostructure on (111) oriented silicon substrate using pulsed laser deposition. Formation of hexagonal praseodymium oxide film; Structural analysis of oxide and semiconductor layer using reflection high energy electron diffraction; Use of transmission electron microscopy.
Databáze: Complementary Index