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| Zdroj: |
Health & Medicine Week; 8/23/2024, p7033-7033, 1p |
| Abstrakt: |
A recent study conducted at Okayama Prefectural University in Japan has investigated the defect behavior of heavily phosphorus-doped Czochralski silicon crystals (HP-Cz-Si) during crystal growth. The study utilized theoretical calculations to determine the concentrations of various phosphorus-related defects in the crystals. The researchers proposed a defect model that accurately represents the growth of HP-Cz-Si crystals and explained the formation of stacking faults and dislocations. This research provides valuable insights into the defect behavior of HP-Cz-Si crystals, which is crucial for improving device characteristics. [Extracted from the article] |
| Databáze: |
Complementary Index |
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