Studies from Okayama Prefectural University Yield New Data on Applied Physics [Defect behavior during growth of heavily phosphorus doped Czochralski silicon crystals (II): Theoretical study].

Předmět:	CRYSTAL growth X-ray photoelectron spectroscopy SILICON crystals THERMAL equilibrium DOPING agents (Chemistry)
Zdroj:	Health & Medicine Week; 8/23/2024, p7033-7033, 1p
Abstrakt:	A recent study conducted at Okayama Prefectural University in Japan has investigated the defect behavior of heavily phosphorus-doped Czochralski silicon crystals (HP-Cz-Si) during crystal growth. The study utilized theoretical calculations to determine the concentrations of various phosphorus-related defects in the crystals. The researchers proposed a defect model that accurately represents the growth of HP-Cz-Si crystals and explained the formation of stacking faults and dislocations. This research provides valuable insights into the defect behavior of HP-Cz-Si crystals, which is crucial for improving device characteristics. [Extracted from the article]
Databáze:	Complementary Index
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