Lattice site location of ultra-shallow implanted B in Si using ion beam analysis.

Autor: Kobayashi, Hajime, Nomachi, Ichiro, Kusanagi, Susumu, Nishiyama, Fumitaka
Zdroj: MRS Online Proceedings Library; 2001, Vol. 669 Issue 1, p1-6, 6p
Databáze: Complementary Index