Lattice site location of ultra-shallow implanted B in Si using ion beam analysis.
Autor: | Kobayashi, Hajime, Nomachi, Ichiro, Kusanagi, Susumu, Nishiyama, Fumitaka |
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Zdroj: | MRS Online Proceedings Library; 2001, Vol. 669 Issue 1, p1-6, 6p |
Databáze: | Complementary Index |
Externí odkaz: |