Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth.

Autor: Tawara, Takeshi, Ueki, Yuko, Nakamura, Shunichi, Gotoh, Masahide, Yonezawa, Yoshiyuki, Nishiura, Masaharu
Zdroj: MRS Online Proceedings Library; 2006, Vol. 911 Issue 1, p1-5, 5p
Databáze: Complementary Index