Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth.
Autor: | Tawara, Takeshi, Ueki, Yuko, Nakamura, Shunichi, Gotoh, Masahide, Yonezawa, Yoshiyuki, Nishiura, Masaharu |
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Zdroj: | MRS Online Proceedings Library; 2006, Vol. 911 Issue 1, p1-5, 5p |
Databáze: | Complementary Index |
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