| Autor: |
Yanfen Gong, Kai Zhao, Huixin He, Wei Cai, Naiwei Tang, Honglong Ning, Sujuan Wu, Jinwei Gao, Guofu Zhou, Xubing Lu, J-M Liu |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 3/21/2018, Vol. 51 Issue 11, p1-1, 1p |
| Abstrakt: |
Low temperature fabrication of high quality dielectric films for high performance flexible electronics is still a big challenge. In this work, we realized low temperature fabrication of high quality amorphous ZrO2 dielectric films via a low-cost solution process. The microstructure and electrical properties, as well as the electronic structures of solution processed ZrO2 films have been investigated systematically. The ZrO2 films with 160 °C annealed showed a low leakage current (3.6 × 10−5 A cm−2 at −3 V) and a high band gap (5.4 eV). The flexible organic thin film transistor (OTFT) made by using the solution-processed amorphous ZrO2 dielectric shows a low operation voltage of 4 V and a high drain current on/off ratio of 2.4 × 105. The frequency response of the ZrO2-OTFT device is up to 51.8 KHz under a low gate voltage of −3 V. Our work demonstrated that a solution processable ZrO2 film is promising for applications in future low power consumption and wearable flexible electronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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