High-resistivity SiGe BiCMOS technology development.
Autor: | Stamper, Anthony, Camillo-Castillo, Renata, Ding, Hanyi, Dunn, James, Jaffe, Mark, Jain, Vibhor, Joseph, Alvin, McCallum-Cook, Ian, Newton, Kim, Parthasarathy, Shyam, Rassel, Robert, Schmidt, Nicholas, Srihari, Srikanth, Wolf, Randy, Zierak, Michael |
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Zdroj: | 2014 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2014, p25-28, 4p |
Databáze: | Complementary Index |
Externí odkaz: |