High-resistivity SiGe BiCMOS technology development.

Autor: Stamper, Anthony, Camillo-Castillo, Renata, Ding, Hanyi, Dunn, James, Jaffe, Mark, Jain, Vibhor, Joseph, Alvin, McCallum-Cook, Ian, Newton, Kim, Parthasarathy, Shyam, Rassel, Robert, Schmidt, Nicholas, Srihari, Srikanth, Wolf, Randy, Zierak, Michael
Zdroj: 2014 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2014, p25-28, 4p
Databáze: Complementary Index