Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC

Autor:	Linnarsson, M.K., Hallen, Anders, Vines, Lasse
Zdroj:	Linnarsson, M.K. Hallen, Anders Vines, Lasse . Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC. Semiconductor Science and Technology. 2019, 34 Semiconductor Science and Technology
Databáze:	NORA (Norwegian Open Research Archive)
Externí odkaz:	http://hdl.handle.net/10852/76179 https://www.duo.uio.no/bitstream/handle/10852/76179/5/Linnarsson_2019_Semicond._Sci._Technol._34_115006.pdf Zobrazit plný text záznamu