Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC
Autor: | Linnarsson, M.K., Hallen, Anders, Vines, Lasse |
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Zdroj: | Linnarsson, M.K. Hallen, Anders Vines, Lasse . Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC. Semiconductor Science and Technology. 2019, 34 Semiconductor Science and Technology |
Databáze: | NORA (Norwegian Open Research Archive) |
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