| Popis: |
Master´s thesis is focused on diagnostics of semiconductor materials by EBIC method (measuring of currents induced beam), determination of the lifetime of minority carriers, or their diffusion length. The theoretical part is aimed at the principle of scanning electron microscopy, the characteristic properties of the microscope and the signals generated by the interaction of the primary electron beam with the sample. The thesis describes a structure of semiconducting silicon, band models, types of lattice defects and doped of semiconductor structures. After that it is described the theory of calculation of the diffusion length of minority carriers in semiconductors of type N and P. The aim of the experiment part of the thesis is to measure the properties of the semiconductor structure by EBIC and determination of diffusion length and lifetime of minority charge carriers based on the measured data The aim of the experiment part of the thesis is to measure the properties of the semiconductor structure by EBIC and determination of diffusion length and lifetime of minority charge carriers on the basis of the measured data. |
